[ET NEWS] Samsung Electronics is seeking to increase high-performance DRAM chips for AI processors and servers by more than 30-fold and supply the chips first to key clients Intel and Nvidia, multiple industry sources told ET News on May 30.
Samsung has produced the chips using the TSV or through-silicon via technology, a high-performance interconnect technique for the 3-D stacked DRAM chips.
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Sources said the company’s chip business unit has recently ordered 20 thermal compression bonding machines, a key equipment for the TSV manufacturing.
Especially, Samsung and the equipment supplier have reportedly succeeded in upgrading the current machine with eight bonding heads. Considering the company has used five machines with a single head, the overall productivity is expected to surge more than 30-fold from the current level.
Samsung plans to adopt the upgraded manufacturing technology for the production of HBM2 and 3DS DRAM chips. About 1 million units of each chip will be shipped per month from next year.
The HBM2 boasts almost eight-fold faster processing speed compared to the fastest DRAM chip GDDR5 currently. The chip is used in the latest processors of Intel and Nvidia to support AI and machine learning.
By Han Ju-yeop (powerusr@etnews.com) (theinvestor@heraldcorp.com)
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